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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1978 Volume 5, Number 4, Pages 931–934 (Mi qe10078)

This article is cited in 3 papers

Brief Communications

Luminescence emitted from a neodymium pentaphosphate crystal excited by radiation from a light-emitting diode

I. Ismailov, B. Khalikov


Abstract: A report is given of the growth method and some physicochemical properties of neodymium pentaphosphate (NdP5O14) samples whose luminescence was excited by radiation from a GaPxAs1–x light-emitting diode with x = 0.008 (λ ≈ 810 nm at 77°K). Narrow luminescence bands of the Nd3+ ions were observed in the region of 900 and 1060 nm when the power density of the exciting radiation was 0.03–3.3 W/cm3.

UDC: 535.37

PACS: 78.55.Hx

Received: 16.10.1977


 English version:
Soviet Journal of Quantum Electronics, 1978, 8:4, 537–539


© Steklov Math. Inst. of RAS, 2026