This article is cited in 3 papers

Silicon film deposition using a gas-jet plasma-chemical method: experiment and gas-dynamic simulation

R. G. Sharafutdinov, P. A. Skovorodko, V. G. Shchukin, V. O. Konstantinov

S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

Abstract: This paper presents results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasma-chemical method. A numerical model of a flow of gas mixtures, flowing out of an annular nozzle unit and flowing into a reactor, is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and describes the experimental data obtained satisfactorily

Keywords: free jet, reactor, simulation, DSMC method, thin silicon films, electron-beam plasma, plasma-chemical deposition.

UDC: 533.17+533.9.03+539.231

Received: 04.06.2018

DOI: 10.15372/PMTF20180503

 English version: Journal of Applied Mechanics and Technical Physics, 2018, 59:5, 786–793

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