E. A. Baranov, S. Ya. Khmel', “Simulation of the emission spectrum of $\mathrm{SiH}$ $(\mathrm{A}^2\Delta\to\mathrm{X}^2\Pi)$ and measurement of the rotational temperature of the $\mathrm{A}^2\Delta$ state in an electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 2003, Volume 44, Issue 5,Pages 4

This article is cited in 4 papers

Simulation of the emission spectrum of $\mathrm{SiH}$ $(\mathrm{A}^2\Delta\to\mathrm{X}^2\Pi)$ and measurement of the rotational temperature of the $\mathrm{A}^2\Delta$ state in an electron-beam plasma

E. A. Baranov, S. Ya. Khmel'

Kutateladze Institute of Thermophysics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090

Abstract: The $0$–$0$ band emission spectrum of the $\mathrm{A}^2\Delta\to\mathrm{X}^2\Pi$ transition of the $\mathrm{SiH}$ molecule was modeled numerically. The results obtained agree well with known calculated and experimental data. The rotational temperature of the $\mathrm{A}^2\Delta$ state of $\mathrm{SiH}$ in a free stream of pure monosilane $(\mathrm{SiH}_4)$ and in a mixture with helium $(\mathrm{He} + \mathrm{SiH}_4)$ activated by an electron beam is determined by comparing calculated and experimental spectra. The assumption that the emission of $\mathrm{SiH}$ results from dissociative excitation of $\mathrm{SiH}_4$ by electron impact is confirmed. Rotational temperatures for various monosilane concentrations and distances from the nozzle are given. The spectra obtained exhibit the emission of silicon ions at wavelengths of $412.807$ and $413.089$ nm.

Keywords: optical emission spectroscopy, rotational temperature, electron beam, monosilane.

UDC: 533.9:539.194

Received: 20.02.2003
Accepted: 20.03.2003