Abstract:
A method for measuring the temperature of the silicon melt during plasma-chemical electron-beam refining is proposed. The method is based on measuring the radiation intensity from the melt in the infrared range and comparing it with the temperature. It is established that the refined silicon temperature can be varied from 1500 K to 2600 K by changing the refining conditions, in particular, the electron beam current.
Keywords:pyrometric measurements, melt temperature measurements, silicon refining, electron beam plasma.
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