PHYSICS. MATHEMATICAL MODELING
Hopping conductivity in single crystals of eutectic composite $(InSb)_{98.2} - (NiSb)_{1.8}$
A. V. Borisenko Belgorod National Research University
Abstract:
The eutectic composite material
$(InSb)_{98.2} - (NiSb)_{1.8}$ was obtained. The material consists of a single crystal InSb semiconductor matrix and oriented
$NiSb$ needles. By X-ray diffraction, it was found that the
$InSb$ semiconductor matrix had a zinc blende structure
$F43m$ with a crystal lattice parameter equal to
$a = 6.49(1)$ Å. The
$NiSb$ needles had a hexagonal structure of the nickel arsenide type
$P63/mmc$, the unit cell parameters of the
$NiSb$ needles were
$a = 3.94(1), c = 5.14(1)$ Å. The electrical conductivity of eutectic composite material
$(InSb)_{98.2} - (NiSb)_{1.8}$ was measured. The mechanisms of electrical conductivity were determined for a singlecrystal composite sample. The region of realization of the variable range hopping mechanism of Shklovsky-Efros was established in the absence of a magnetic field. The temperature of the beginning of the hopping conductivity was calculated
$Ò\nu = 126.1 Ê$. Microscopic parameters were calculated for the sample
$(InSb)_{98.2} - (NiSb)_{1.8}$ when the
$NiSb$ needles were oriented parallel to the direction of the magnetic field and perpendicular to the direction of the current through the sample. Was determined the width of the Coulomb gap ∆ =
$+- 6.3 meV$, the dielectric permittivity
$ê = 11$, the density of the localized states
$g_0 = 1.66$ ·
$1016 cm-3 meV-1$ and the localization radius
$a = 245.8$ Å.
Keywords:
indium antimonide, nickel antimonide, eutectic composite, Hall effect, hopping conductivity. Received: 30.12.2023
Accepted: 30.12.2023
DOI:
10.52575/2687-0959-2023-55-4-354-360
