Abstract:
In the article a method for growing high quality $Cd_3As_2$ thin films are described. The dependence of the conductivity on the temperature in the range from 3 K to 300 K. In the region of helium temperatures, range of realization of the Shklovskii-Efros type variable range hopping conductivity mechanisms was determined. In the density of localized states, the radius of localization of charge carriers, the Coulomb gap $\triangle= 0.095$ meV and the rigid gap $\delta = 0.002$ meV are calculated.
