Abstract:
The transport properties of amorphous films of Cd_3As_2 and its solid solutions $(Cd_{1-x-y}Zn_xMn_y)_3As_2 (x + y = 0.1; y = 0, 0.02)$ obtained by magnetron sputtering in the temperature range 10-300 K have been studied. Doping with Zn leads to a change in the type conductivity: from semiconductor to metallic. The resistance of $(Cd_{0.9}Zn_{0.1})_3As_2$ and $(Cd_{0.9}Zn_{0.08}Mn_{0.02})_3As_2$ thin films decreases with decreasing temperature. This behavior is associated with a decrease in the electron mobility due to scattering by ionized impurities upon heating.
Keywords:Dirac semimetal, cadmium arsenide, zinc arsenide, thin films, electron mobility.
