This article is cited in 5 papers

PHYSICS. MATHEMATICAL MODELING

Modern and promising semiconductor materials for microelectronics of the next decade (2020-2030)

A. A. Demidov, S. B. Rybalka

Bryansk State Technical University

Abstract: In the review have been considered modern and promising semiconductor materials (silicon ($Si$), silicon carbide ($SiC$), gallium nitride ($GaN$), diamond, gallium oxide ($Ga_2O_3$), aluminum nitride ($AlN$), boron nitride ($BN$)) from the view point of their use in import substitution of existing and also creation of new microelectronic products. The prospects of using the most topical semiconductor materials in the next decade are also being assessed.

Keywords: silicon ($Si$), silicon carbide ($SiC$), gallium nitride ($GaN$), diamond, gallium oxide ($Ga_2O_3$), aluminum nitride ($AlN$), boron nitride ($BN$), power electronics.

Received: 29.03.2021

DOI: 10.52575/2687-0959-2021-53-1-53-72