AlGaAs subcells for hybrid А$^3$В$^5$//Si solar cells

S. A. Mintairov, V. M. Emelyanov, N. A. Kalyuzhnyy, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts

Ioffe Institute, St. Petersburg

Abstract: The values of diffusion lengths of minority charge carriers in Al$_x$Ga$_{1-x}$As (AlGaAs) layers with aluminum concentrations $x$ from 0 to 0.2 were determined. For this the spectra of quantum yield for single-junction solar cells with photoactive layers based on AlGaAs have been approximated. The calculations of the external quantum efficiency spectra for GaInP, AlGaAs and Si subcells of hybrid GaInP/AlGaAs//Si solar cells (SC) for space applications are performed. It is shown that GaInP/AlGaAs//Si SCs provide an efficiency of 33.5% (1 sun, AM0) with complete carriers collection from the base layer of the AlGaAs subcell and an aluminum concentration of 10%, 33% (1 sun, AM0) when using a gradient composition in the base layer and an average aluminum concentration of 8% and 32.8% (1 sun, AM0) when using a constant aluminum concentration of 8%.

Keywords: hybrid solar cells, subcell, movpe, efficiency, quantum efficiency, mathematical modeling.

Received: 26.08.2025
Revised: 07.10.2025
Accepted: 07.10.2025

DOI: 10.61011/PJTF.2026.03.62184.20481

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