Influence of heterostructure radius increment on the heterointerface of IIIV$_x$V$_{1-x}$ nanowires

E. D. Leshchenko^a, V. G. Dubrovskii<sup>b

a</sup> Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg State University

Abstract: The formation of axial heterostructures in IIIV$_x$V$_{1-x}$ nanowires is studied theoretically. We consider the case when the nanowire radius changes during the growth. It is shown that an increase in the radius has almost no effect on the heterointerface of thin nanowires. The effect becomes noticeable at a high rate of radial growth or for thick nanostructures. It is shown that the radius increment during growth leads to the formation of a sharper heterojunction, which is especially pronounced in nanostructures with a large radius.

Keywords: modelling, nanowires, III–V–V heterostructures, interfacial profile.

Received: 03.09.2025
Revised: 03.10.2025
Accepted: 03.10.2025

DOI: 10.61011/PJTF.2026.03.62182.20488

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