Study of the influence of current spreading on the operating characteristics of GaP/GaPNAs/GaP micro-leds on Si

L. N. Dvoretskaya^a, A. M. Mozharov^a, V. S. Volosatova^a, V. V. Fedorov^ab, A. K. Kaveev^ac, D. V. Miniv^a, I. S. Mukhin<sup>ab

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg

Abstract: A light-emitting semiconductor device based on the GaP/GaPNAs/GaP material system operating in the red-orange spectral range is considered. Numerical modeling of current spreading in the material system under consideration is presented, as well as experimental data demonstrating electroluminescence in the red frequency range. It is shown that for $p$–$i$–$n$ GaP/GaPNAs/GaP heterostructures, when forming device light-emitting regions, the creation of separating mesas is not required, since the light emission region is largely limited to the region of the top electrode, which significantly simplifies the technological process of manufacturing LEDs.

Keywords: GaPNAs on Si, GaP on Si, textured GaP(NAs), matrix led, silicon, semiconductors.

Received: 28.08.2025
Revised: 23.09.2025
Accepted: 24.09.2025

DOI: 10.61011/PJTF.2026.03.62175.20485

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