L. M. Sorokin, V. I. Sokolov, A. E. Kalmykov, A. V. Chernyaev, “Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 24,Pages <nobr>61

This article is cited in 2 papers

Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers

L. M. Sorokin^ab, V. I. Sokolov^ab, A. E. Kalmykov^ab, A. V. Chernyaev^ab

^a Ioffe Institute, St. Petersburg
^b Saint-Petersburg State Mining Institute

Abstract: A method of separating porous silicon (por-Si) layer without deformation from a silicon substrate, which virtually excludes almost any risk of subsequent degradation of the isolated por-Si layer is proposed. The current-voltage characteristics of por-Si have been measured in a temperature interval of 300–255 K. Direct measurements of the conductivity of por-Si have been performed for the first time and it is established that the conductivity has an activation nature for the current passage parallel to the por-Si sample surface.

Received: 08.09.2010