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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010 Volume 36, Issue 24, Pages 33–39 (Mi pjtf9704)

This article is cited in 4 papers

High growth rate of AlN in a planetary MOVPE reactor

V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, P. N. Brunkov, E. E. Zavarin, A. F. Tsatsul'nikov

Ioffe Institute, St. Petersburg

Abstract: AlN growth in a low-scale production AIX2000HT MOVPE system was studied. The dependence of the growth rate on ammonia flow was shown to be of a threshold nature originating from gas-phase parasitic reactions. An AlN growth rate up to 8.6 $\mu$m/h under optimized reactor conditions was demonstrated.

Received: 12.07.2010


 English version:
Technical Physics Letters, 2010, 36:12, 1133–1135

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