R. M. Peleshchak, I. Ya. Bachynsky, G. G. Zegrya, “Calculating potential and electron density for strained semiconductor quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 24,Pages <nobr>1

Calculating potential and electron density for strained semiconductor quantum dots

R. M. Peleshchak^a, I. Ya. Bachynsky^a, G. G. Zegrya^b

^a Drohobych Ivan Franko State Pedagogical University
^b Ioffe Institute, St. Petersburg

Abstract: Distributions of the electrostatic potential, electric field strength, and electron concentration for a strained semiconductor quantum dot (QD) have been calculated within the nonlinear Poisson model with allowance for the deformation potential that arises due to a lattice misfit between the QD and matrix.

Received: 21.06.2010