This article is cited in 3 papers

Photoluminescence of CdHgTe based nanoheterostructures

K. J. Mynbaev^a, N. L. Bazhenov^a, V. I. Ivanov-Omskii^a, A. V. Shilyaev^a, V. S. Varavin^b, N. N. Mikhailov^b, S. A. Dvoretskii^b, Yu. G. Sidorov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: We have studied the photoluminescence (PL) spectra of Cd$_x$Hg$_{1-x}$Te/Cd$_y$Hg$_{1-y}$Te nanohetero-structures grown by molecular beam epitaxy on CdTe/ZnTe/GaAs substrates. The width of potential wells in the structures was varied within $d$ = 12–200 nm and the material composition was changed within $x\sim$ 0.25–0.40 in the well and $y\sim$ 0.68–0.82 in the barrier layers. The PL spectra of samples with $d\le$ 33 nm exhibit transitions between quantum confinement levels. The samples with $d >$ 50 nm display the PL due to excitons localized on composition fluctuations, which is characteristic of Cd$_x$Hg$_{1-x}$Te epilayers with thicknesses above 3 $\mu$m. It is established that the exciton PL band in Cd$_x$Hg$_{1-x}$Te exhibit broadening that is determined both by stochastic fluctuations of the composition and by its macroscopic inhomogeneities.

Received: 11.07.2010

 English version: Technical Physics Letters, 2010, 36, 1099–1102

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