This article is cited in 5 papers

Photoluminescence of CdHgTe epilayers grown on silicon substrates

K. J. Mynbaev^a, N. L. Bazhenov^a, V. I. Ivanov-Omskii^a, V. A. Smirnov^a, M. V. Yakushev^b, A. V. Sorochkin^b, V. S. Varavin^b, N. N. Mikhailov^b, G. Yu. Sidorov^b, S. A. Dvoretskii^b, Yu. G. Sidorov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: We have studied the photoluminescence (PL) spectra of thin layers of mercury cadmium telluride (CdHgTe) solid solutions grown by molecular beam epitaxy on silicon substrates. It is established that a disorder in the solid solution structure in these layers does not exceed that in the layers grown by the same method on GaAs substrates. The PL spectra of CdHgTe/Si samples exhibit emission lines characteristic of the structurally perfect material, in particular, the lines due to donor-acceptor recombination and the recombination of excitons bound to impurities.

Received: 29.06.2010

 English version: Technical Physics Letters, 2010, 36:12, 1085–1088

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