This article is cited in 3 papers

Optical anisotropy of InAs quantum dots

S. A. Blokhin^a, A. M. Nadtochiy^a, A. A. Krasivichev^a, L. Ya. Karachinsky^a, A. P. Vasil'ev^a, M. V. Maksimov^a, A. E. Zhukov^a, N. N. Ledentsov^ab, V. M. Ustinov<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b VI Systems GmbH, Hardenbergstrasse 7, Berlin, 10623, Federal Republic of Germany

Abstract: The optical anisotropy of InAs quantum dots (QDs) synthesized in the regime of either continuous or submonolayer deposition on a singular GaAs(100) surface have been studied using polarized photoluminescence measurements. It is established that an isolated array of QDs formed in a continuous deposition regime possesses a weak ($<$ 1–2%) optical anisotropy, whereas the vertical matching (coupling) of such QDs via less than 15-nm-thick spacer layers leads to an 8% linear polarization of PL along the [01] crystallographic direction. QDs formed in the regime of submonolayer deposition exhibit a strong (17–20%) anisotropy of emission from the ground and excited states of QDs in the same crystallographic direction.

Received: 30.07.2010

 English version: Technical Physics Letters, 2010, 36:12, 1079–1081

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