V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, S. O. Usov, V. S. Sizov, A. L. Zakhgeim, A. E. Chernyakov, A. F. Tsatsul'nikov, “High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 22,Pages <nobr>89

This article is cited in 7 papers

High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range

V. V. Lundin^ab, A. E. Nikolaev^ab, A. V. Sakharov^ab, E. E. Zavarin^ab, S. O. Usov^ab, V. S. Sizov^ab, A. L. Zakhgeim^ab, A. E. Chernyakov^ab, A. F. Tsatsul'nikov^ab

^a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: A new method of forming the active region in high-efficiency InGaN/GaN/AlGaN light-emitting diode (LED) structure for long-wave green range is described. The introduction of a short-period InGaN/GaN superlattice situated immediately under the emitting quantum well and overgrown with GaN layer at reduced temperature leads to a more than tenfold increase in the efficiency of emission. For the proposed LEDs, the maximum quantum efficiency was 12% at 552 nm and 8% at 560 nm.