This article is cited in 1 paper

Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content

R. A. Castro, V. A. Bordovskii, G. I. Grabko

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The temperature and frequency dependences of the dielectric parameters (dielectric permittivity and loss tangent) of modified arsenic triselenide layers with high bismuth content have been studied. In the infralow frequency range, an increase in the temperature leads to significant growth of the real component of the complex permittivity and the appearance of maxima in the dielectric loss tangent. At greater frequencies, these maxima shift toward higher temperatures.

Received: 16.06.2010

 English version: Technical Physics Letters, 2010, 36:10, 966–968

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