This article is cited in 1 paper

Increasing the operating frequency in high-power distributed microgate bipolar switches

A. V. Gorbatyuk^ab, I. V. Grekhov^ab, D. V. Gusin<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Polytechnic University

Abstract: The dynamic turn-off losses can be decreased, and the operating frequency increased in high-power distributed microgate bipolar switches (MGBSs) by optimizing the device design so as to ensure that the charge extracted from the high-ohmic base and the built-in impurity charge would have opposite signs. In particular, in MGBS with a hole-extracting cathode gate and an anode buffer layer, this is achieved by using $p$ type doping of the base instead of the $n$ type. A special analytical model has been constructed that describes the MGBS turn-off process. It is established that, at a voltage of $\sim$5 kV, the losses per turn-off operation can be reduced from 200 to 100 mJ/cm$^2$ and the frequency increased from 0.5 to 1.0 kHz.

Received: 17.06.2010

 English version: Technical Physics Letters, 2010, 36:10, 945–948

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