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On the degree of blocking of the surface recombination of photogenerated carriers in semiconductors by the subsurface variband layer

V. A. Kholodnov

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow

Abstract: A mathematically correct description of the model of carrier photogeneration by low-intensity radiation in surface-variband (graded-gap) semiconductors with a stepwise profile of the variband field at the boundary with the homogeneous region is proposed. A condition for the blocking of the surface recombination of photogenerated carriers by the variband layer is explicitly formulated.

Received: 19.05.2010

 English version: Technical Physics Letters, 2010, 36:10, 929–932

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