This article is cited in 1 paper

Ultrafast turn-off of high currents by field-controlled integrated thyristor

I. V. Grekhov, L. S. Kostina, A. V. Rozhkov

Ioffe Institute, St. Petersburg

Abstract: The turn-off process in a powerful high-voltage switch of the new type, integrated thyristor controlled by an external MOSFET, has been studied. Dynamic characteristics were measured in high current turn-off regimes, in which plasma is removed by the full device current. The limiting density of switched current amounted to 600 A/cm$^2$. The regime with short circuit of several dozen thousand parallel operating microthyristor cells is quite effective, ensuring a current decay time of about 40 ns, which is several times as small as that in all other types of high-voltage switches for working voltages above 1.5 kV.

Received: 03.06.2010

 English version: Technical Physics Letters, 2010, 36:10, 926–928

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