Abstract:
Epitaxial layers of $n$-type Si$_{1-x}$Sn$_x$ (0 $\le x\le$ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of $p$Si–$n$Si$_{1-x}$Sn$_x$ (0 $\le x\le$ 0.04) structures were studied at various temperatures. It is established that Si$_{0.96}$Sn$_{0.04}$ films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the $p$Si–$n$Si$_{0.96}$Sn$_{0.04}$ structure is shifted to longer wavelengths as compared to that of the $p$Si–$n$Si structure. The photosensitivity of the $p$Si–$n$Si$_{0.96}$Sn$_{0.04}$ structure in the impurity absorption range depends on the temperature.
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