Abstract:
The temperature dependence of the electro- and photoluminescence of heterostructures with InGaAs/GaAs quantum well and a closely spaced manganese delta ($\delta$)-doped layer in the GaAs barrier was investigated. It is found that the proposed heterostructures exhibit increased temperature stability and decreased temperature quenching as compared to the control structures containing no $\delta$-doped layers. An increase in the operating temperature is explained by the appearance of an additional potential barrier for electrons due to the $\delta$-doped acceptor layer formation in the near-surface barrier.
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