This article is cited in 5 papers

Dispersion of dielectric parameters in modified arsenic triselenide layers

R. A. Castro, V. A. Bordovskii, G. I. Grabko

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The dielectric permittivity and loss tangent of bismuth-modified arsenic triselenide As$_2$Se$_3$ $\langle$Bi$\rangle_x$ films are studied for the first time in the frequency range of 10$^{-2}$–10$^4$ Hz. It is established that doping with bismuth significantly influences the process of dielectric polarization. Mechanisms of the observed effects are discussed.

Received: 06.04.2010

 English version: Technical Physics Letters, 2010, 36:9, 783–785

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