This article is cited in 11 papers

Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

M. K. Bakhadyrkhanov, K. S. Ayupov, H. M. Iliev, G. Kh. Mavlonov, O. E. Sattarov

Tashkent State Technical University named after Islam Karimov

Abstract: It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illumination, and the external electric and magnetic fields.

Received: 22.03.2010

 English version: Technical Physics Letters, 2010, 36:8, 741–744

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