K. N. Ermakov, N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. G. Tverskoi, S. M. Lyubinskii, “Experimental investigation of the effect of high-energy protons on charge-coupled devices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 13,Pages <nobr>54

This article is cited in 3 papers

Experimental investigation of the effect of high-energy protons on charge-coupled devices

K. N. Ermakov^ab, N. A. Ivanov^ab, O. V. Lobanov^ab, V. V. Pashuk^ab, M. G. Tverskoi^ab, S. M. Lyubinskii^ab

^a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
^b Television Research Institute, St. Petersburg

Abstract: The effect of 1000-MeV protons on CCD matrix based image sensors, which are widely used in various equipment on-board space vehicles, have been studied in order to determine how the local structural damage of crystalline lattice caused by high-energy nuclear particles influences the parameters of CCD matrices. The dependence of the dark current of CCD matrices on the proton irradiation has been studied in a range of fluences up to 2 $\times$ 10$^{11}$ cm$^{-2}$.