A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova, S. P. Lebedev, N. V. Seredova, A. S. Tregubova, “Use of sublimation epitaxy for obtaining volume 3C-SiC crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 12,Pages <nobr>71

Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova, S. P. Lebedev, N. V. Seredova, A. S. Tregubova

Ioffe Institute, St. Petersburg

Abstract: It is demonstrated that polytype-homogeneous, thick ($>$ 100 $\mu$m) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing volume 3C-SiC crystals by the modified Lely method.

Received: 25.02.2010