Abstract:
It is established that an array of silicon nanoislands is formed on the surface of a sapphire substrate at the initial stages of molecular beam epitaxy. Silicon islands formed at low temperatures of the substrate (below 650$^\circ$C) exhibit a pyramidal shape, while the islands grown at
$T >$ 650$^\circ$ possess a dome shape. The maximum density of islands was 2 $\times$ 10$^{11}$ cm$^{-2}$, their lateral dimensions were within 20 nm, and their heights did not exceed 3 nm.
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