K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, T. Aitmukan, B. A. Rakymetov, R. B. Vermenichev, “Morphology of porous silicon under long anodic etching in electrolyte with internal current source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 11,Pages <nobr>104

This article is cited in 7 papers

Morphology of porous silicon under long anodic etching in electrolyte with internal current source

K. B. Tynyshtykbaev^ab, Yu. A. Ryabikin^ab, S. Zh. Tokmoldin^ab, T. Aitmukan^ab, B. A. Rakymetov^ab, R. B. Vermenichev^ab

^a Institute of Physics and Technology, Ministry of Education and Science of the Republic of Kazakhstan, Almaty, Kazakhstan
^b Kazakh National Technical University after K. I. Satpaev

Abstract: The results of electron microscopy investigation of morphology of porous silicon (PS) received under long anodic etching by using internal current source in electrolytes such as HF:H$_2$O$_2$:H$_2$C$_5$OH and HF:H$_2$O$_2$ are presented. Mosaic structure of nanoporous silicon is observed as the islands separated by silicon ledges. It was shown that these islands are presented as assemble of oxidized nanocrystallites and silicon ledges. The results of elemental analysis of islands of oxidized nanocrystallites and silicon ledges are presented.

Received: 01.12.2009