This article is cited in 9 papers

Microchannel avalanche photodiode with broad linearity range

Z. Sadygov^ab, A. Ol'shevskii^ab, N. Anfimov^ab, T. Bokova^ab, A. Dovlatov^ab, V. Zhezher^ab, Z. Krumshtein^ab, R. Mehtieva^ab, R. Mukhtarov^ab, M. Troitskaya^ab, V. Chalyshev^ab, I. Chirikov-Zorin^ab, V. Shukurova<sup>ab

a</sup> Joint Institute for Nuclear Research, Dubna, Moscow region
^b Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

Abstract: Design and operation principles of a new microchannel avalanche photodiode with an avalanche multiplication coefficient of up to 10$^5$ and a linearity range expanded by an order of magnitude compared to the existing analogs are described. A distinctive feature of the new device design is that the forward-biased $p$–$n$ junctions (playing the role of individual quenching resistors) are situated under each pixel. This circumstance ensures an increase in the density of multiplication channels up to 40000 mm$^2$ at a 100% sensitive device area.

Received: 26.01.2010

 English version: Technical Physics Letters, 2010, 36:6, 528–530

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