This article is cited in 12 papers

Anisotropic magnetoresistance and planar hall effect in GaAs structure with Mn-delta-doped layer

A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Anisotropic magnetoresistance and the planar Hall effect are discovered and studied in a GaAs structure containing a single layer delta-doped with manganese to its total content equivalent to 0.18 monolayer. The Mn-delta-doped structures were obtained by combining the methods of metalorganic chemical vapor deposition (MOCVD) in a hydride system and laser ablation of solid targets in a common technological cycle. The character of the dependence of the Hall resistance on the magnetic field is indicative of the presence of a planar cubic magnetic anisotropy.

Received: 20.01.2010

 English version: Technical Physics Letters, 2010, 36:6, 511–513

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