A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D. K. Nelson, B. S. Razbirin, A. S. Tregubova, “Studying edge luminescence of <nobr>$n$</nobr>-3C-SiC epilayers grown on 6H-SiC substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 11,Pages <nobr>32

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Studying edge luminescence of $n$-3C-SiC epilayers grown on 6H-SiC substrates

A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D. K. Nelson, B. S. Razbirin, A. S. Tregubova

Ioffe Institute, St. Petersburg

Abstract: Epitaxial films of cubic silicon carbide ($n$-3C-SiC) polytype grown on hexagonal (6H-SiC) polytype substrates by sublimation epitaxy in vacuum have been studied. The films of the best structural quality exhibit low-temperature photoluminescence related to the recombination of bound excitons. The results are compared to the available data for volume 3C-SiC crystals.

Received: 02.02.2010