This article is cited in 2 papers

Effect of electron irradiation attenuated by aluminum screens on the electrical parameters of $p$–$n$ silicon structures

I. G. Marchenko, N. E. Zhdanovich

Scientific-Practical Materials Research Centre of NAS of Belarus

Abstract: We have studied the influence of irradiation by 6-MeV electrons via flat aluminum screens with thicknesses $d$ = 2–14 mm (mass thicknesses, 0.5–3.8 g/cm$^2$) on the properties of $p^+$–$n$–$n^+$ silicon structures, including the nonequilibrium charge carrier lifetime $(\tau)$, reverse current $(I_R)$, and forward current-voltage (I–U) characteristics. In the case of a screen with $d$ = 14 mm (3.8 g/cm$^2$), the irradiated structures exhibit significantly smaller changes in $I_R$ values and I–U curves compared to those for $d$ = 2–12 mm, whereas a decrease in $\tau$ (from 20 to 1.5 $\mu$s) is the same.

Received: 14.09.2009
Revised: 21.01.2010

 English version: Technical Physics Letters, 2010, 36:5, 464–467

Bibliographic databases:

•