This article is cited in 6 papers

Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing

D. V. Marin^ab, V. A. Volodin^ab, E. B. Gorokhov^ab, D. V. Shcheglov^ab, A. V. Latyshev^ab, M. Vergnat^c, J. Koch^c, B. N. Chichkov<sup>c

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Laboratoire de Physique des Matériaux (LPM), Nancy-Université, CNRS, Boulevard des Aiguillettes B.P. 239, 54506 Vandoeuvre lés Nancy, France Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover, Germany

Abstract: We have studied the formation and modification of germanium nanoclusters in GeO$_x$ films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of $\lambda$ = 800 nm and a pulse duration $\tau$ of about 30 fs or a KrF excimer laser with $\lambda$ = 248 nm and $\tau$ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeO$_x$ matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiN$_x$O$_y$. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeO$_x$ films.

Received: 14.12.2009

 English version: Technical Physics Letters, 2010, 36:5, 439–442

Bibliographic databases:

•