This article is cited in 1 paper

Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy

M. D. Vilisova^a, V. P. Germogenov^a, O. Zh. Kaztaev^a, V. A. Novikov^a, I. V. Ponomarev^a, A. N. Titkov<sup>b

a</sup> Tomsk State University
^b Ioffe Institute, St. Petersburg

Abstract: The method of scanning Kelvin probe force microscopy has been used to study the electric field distribution in GaAs-based $p^+$–$\pi$–$n$–$n^+$ detector structures. In the active layer volume, two maxima in the field strength profiles have been found, which are localized in the regions of $p^+$–$\pi$ and $\pi$–$n$ junctions. A volt-age drop on the $\pi$–$n$ junction expands the region of collection of nonequilibrium holes, thus increasing the charge collection efficiency for the absorption of $\gamma$ photons with an energy of 59.5 keV.

Received: 13.11.2009

 English version: Technical Physics Letters, 2010, 36:5, 436–438

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