I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, E. V. Kunitsyna, V. V. Dyudelev, I. M. Gadzhiev, A. G. Deryagin, E. A. Grebenshchikova, G. G. Konovalov, M. P. Mikhailova, N. D. Il'inskaya, V. I. Kuchinskii, Yu. P. Yakovlev, “Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 9,Pages 43

This article is cited in 3 papers

Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range

I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, E. V. Kunitsyna, V. V. Dyudelev, I. M. Gadzhiev, A. G. Deryagin, E. A. Grebenshchikova, G. G. Konovalov, M. P. Mikhailova, N. D. Il'inskaya, V. I. Kuchinskii, Yu. P. Yakovlev

Ioffe Institute, St. Petersburg

Abstract: Fast-response, uncooled $p$–$i$–$n$ photodiodes with a long-wavelength spectral sensitivity boundary at $\lambda$ = 2.4 $\mu$m have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low doping level (10$^{14}$–10$^{15}$ cm$^{-3}$) in the active layer ensured a low capacitance of the photodiode structure (below 1 pF at a sensitive area diameter of 100 $\mu$m) and a record small response time (on a level of 100–150 ps). The photodiode pass band reaches up to 2 GHz. The proposed devices are characterized by a small dark current level (500–1000 nA at a reverse bias voltage of 1–3 V) and a detection ability reaching 9 $\times$ 10$^{10}$ cm $\cdot$ Hz$^{1/2}$ $\cdot$ W$^{-1}$ in a spectral interval of maximum sensitivity within 1.9–2.2 $\mu$m.

Received: 11.01.2010