This article is cited in 7 papers

Characteristics of thin calcium fluoride barrier layers for field-effect transistors and functional electronic devices

Yu. Yu. Illarionov, M. I. Vexler, S. M. Suturin, V. V. Fedorov, N. S. Sokolov

Ioffe Institute, St. Petersburg

Abstract: Thin (2–7 monolayer thick) layers of calcium fluoride (CaF$_2$) of device quality have been obtained using molecular beam epitaxy on Si(111) substrates. The current-voltage characteristics of metal-insulator-semiconductor (MIS) structures with these films well correspond to theoretical results obtained with correctly taking into account the conserved transverse wave vector component of tunneling carriers. According to calculations, the tunneling currents in CaF$_2$ based MIS structures are smaller than those in the standard structures with oxides used in field-effect transistors.

Received: 30.12.2009

 English version: Technical Physics Letters, 2010, 36:5, 404–407

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