Abstract:
Gallium nitride (GaN) layers on sapphire substrates have been grown by hydride-chloride vaporphase epitaxy (HVPE) at a Ga-source temperature reduced from 890$^\circ$C (standard value) to 600$^\circ$C. All epilayers are transparent and have smooth surfaces. The structural quality of layers was evaluated by measuring the X-ray rocking curve width (FWHM) using a triple-crystal X-ray diffractometer. For the best samples, this quantity amounted to 8 arc min. Analysis of the dependence of the crystal structure quality and photoluminescent properties of GaN layers on the Ga-source temperature showed that a decrease in this parameter to 600$^\circ$C did not significantly affect the HVPE growth of GaN despite a considerable change in the vapor phase composition (ratio of GaCl and GaCl$_3$ concentrations).
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