This article is cited in 4 papers

Features of electrostimulated degradation of aluminum metallization on silicon surface in the presence of dielectric steps

A. A. Skvortsov, V. V. Rybin, S. M. Zuev

Ulyanovsk State University

Abstract: Features of thermal degradation of the aluminum metallization layers deposited onto the silicon surface with dielectric steps have been studied during the passage of single rectangular electric pulses with a current density amplitude of $j<$ 8 $\times$ 10$^{10}$ A/m$^2$ and a duration of 100–1000 $\mu$s. An approach to the diagnostics of metallization in the presence of dielectric sublayers is proposed, which allows the range of safe operation parameters to be determined.

Received: 21.10.2009

 English version: Technical Physics Letters, 2010, 36:3, 282–284

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