This article is cited in 1 paper

Formation of thin nanostructured layers during heterogeneous gas-phase synthesis from small-size volatile metal complexes on the surface of semiconductors and dielectrics

A. M. Badalyan^a, L. F. Bakhturova, V. V. Kaichev^b, B. P. Kashnikov^c, O. V. Polyakov^a, O. P. Pchelyakov^c, G. I. Smirnov

^a Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^b Boreskov Institute of Catalysis SB RAS, Novosibirsk
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: We have developed and verified a new method for the formation of thin nanostructured layers on semiconductor and dielectric substrates by heterogeneous gas-phase synthesis from small-sized volatile metal complexes. Thin nanostructured layers of copper on silicon and silica substrates were successfully formed from small-sized volatile formiate metal complexes using a combined synthesis-transfer process. It is established that copper in the layers deposited by this method predominantly occurs in the metallic (Cu$^0$) state in nanosized grains with a characteristic close-packed structure.

Received: 21.10.2009

 English version: Technical Physics Letters, 2010, 36:3, 265–268

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