Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films

D. V. Kulikov^ab, Yu. V. Trushin^ab, V. S. Kharlamov<sup>ab

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg

Abstract: The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic equations. The dependence of the GaN film growth rate on the ion energy is determined and changes in the structure of films grown at different ion energies are explained. Theoretical estimates satisfactorily agree with the available experimental data.

Received: 24.11.2009

 English version: Technical Physics Letters, 2010, 36:3, 262–264

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