Abstract:
The region of the main potential drop in a sharp $p^+$–$n^+$ junction in GaAs has been studied using the conventional and gradient scanning Kelvin probe force microscopy (KPFM) techniques. It is shown that the gradient method offers advantages for quantitative measurements. An algorithm for the program implementing the gradient KPFM method on standard commercial atomic-force microscopes is proposed. It is established that the layer of adsorbed water contributes to the measured width of the main potential drop region.