This article is cited in 1 paper

Spectrally sensitive MOS photovaricaps based on CdZnTe and CdS crystals

Yu. A. Zagoruiko, V. A. Khrist’yan, P. V. Mateichenko

Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov

Abstract: Metal-oxide-semiconductor (MOS) heterostructures based on CdS and CdZnTe crystal substrates have been obtained by photothermal oxidation (PTO) in an oxygen-containing atmosphere. PTO regimes that ensure the formation of CdO films with various electrical characteristics on CdS substrates are determined. The obtained MOS structures exhibit high values of the light-induced capacitance variation. The position of the maximum spectral sensitivity of the capacitance of photovaricaps can be significantly changed by varying the stoichiometric composition of the initial semiconductor crystals and by doping them with electrically active impurities.

Received: 22.06.2009

 English version: Technical Physics Letters, 2010, 36:2, 153–155

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