E. O. Filatova, K. M. Lysenkov, A. A. Sokolov, A. A. Ovchinnikov, D. E. Marchenko, V. M. Kashkarov, I. V. Nazarikov, “Spectroscopic investigations of the stability of porous silicon structure obtained by etching Si(100) in aqueous ammonium fluoride solution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 3,Pages <nobr>53

Spectroscopic investigations of the stability of porous silicon structure obtained by etching Si(100) in aqueous ammonium fluoride solution

E. O. Filatova^abc, K. M. Lysenkov^abc, A. A. Sokolov^abc, A. A. Ovchinnikov^abc, D. E. Marchenko^abc, V. M. Kashkarov^abc, I. V. Nazarikov^abc

^a Saint Petersburg State University
^b BESSY II, Helmholtz-Zentrum Berlin, 12489 Berlin, Germany
^c Voronezh State University

Abstract: The structure of porous silicon (por-Si) obtained by electrochemical etching of Si(100) single crystal wafers in an aqueous ammonium fluoride solution with isopropyl alcohol additions has been studied using X-ray reflection spectroscopy, X-ray photoelectron spectroscopy, and external X-ray quantum yield measurements. It is established that por-Si layers obtained by the nontraditional technology (not involving hydrofluoric acid) possess a partly amorphized structure and bear a stable surface oxide film with a thickness not exceeding 5 nm.

Received: 14.07.2009