This article is cited in 1 paper

Growth and properties of single crystals of Si$_{1-x}$Ge$_x$(0 $<x<$ 0.35) solid solutions

I. G. Atabaev^abc, N. A. Matchanov^abc, M. U. Khazhiev^abc, Sh. A. Yusupova<sup>abc

a</sup> Physical-Technical Institute, Uzbekistan Academy of Sciences
^b Department of Electrical and Computer Engineering, Michigan State University, East Lansing, USA
^c Ioffe Institute, St. Petersburg

Abstract: Single-crystalline Si$_{1-x}$Ge$_x$ ingots with a germanium content of up to 35 at.%, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si$_{1-x}$Ge$_x$ single crystals have been studied as functions of the germanium content.

Received: 21.09.2009

 English version: Technical Physics Letters, 2010, 36:2, 115–118

Bibliographic databases:

•