L. I. Goray, N. I. Chkhalo, Yu. A. Vainer, “Detecting quasi-periodic $\{11n\}$, $n$ = 7–11 faces in samples with Ge/Si quantum dots by grazing X-ray reflectometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 3,Pages 31

This article is cited in 8 papers

Detecting quasi-periodic $\{11n\}$, $n$ = 7–11 faces in samples with Ge/Si quantum dots by grazing X-ray reflectometry

L. I. Goray^abc, N. I. Chkhalo^abc, Yu. A. Vainer^abc

^a Saint Petersburg Physics and Technology Centre for Research and Education
^b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: High-resolution grazing X-ray reflectometry is used to obtain experimental and theoretical data on the intensity of specular and diffuse reflection from self-organized structures grown by molecular beam epitaxy with single-layer (non-overgrown) and multilayer (overgrown) Ge/Si quantum dots (QDs). Using the positions of diffuse scattering peaks in the direct space, the slopes of quasi-periodic faces have been determined to within $\pm$ 0.1$^\circ$ by a method employed previously for the investigation of In(Ga)As/GaAs quantum dots. Finding the quasi-periodic $\{11n\}$, $n$ = 7–11 faces (typical of the growth of ordered QDs) in the samples with disordered Ge/Si quantum dots is evidence of the generality of mechanisms of QD formation in different systems.

Received: 08.05.2009