D. A. Olyanich, D. N. Chubenko, D. V. Gruznev, V. G. Kotlyar, V. V. Ustinov, N. I. Solin, A. V. Zotov, A. A. Saranin, “Effect of Si(100)–$c$(4 $\times$ 12)–Al and Si(111)–5.55 $\times$ 5.55–Cu reconstructions on the deposition of cobalt onto silicon surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 3,Pages 15

This article is cited in 3 papers

Effect of Si(100)–$c$(4 $\times$ 12)–Al and Si(111)–5.55 $\times$ 5.55–Cu reconstructions on the deposition of cobalt onto silicon surface

D. A. Olyanich^ab, D. N. Chubenko^ab, D. V. Gruznev^ab, V. G. Kotlyar^ab, V. V. Ustinov^ab, N. I. Solin^ab, A. V. Zotov^ab, A. A. Saranin^ab

^a Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
^b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The use of surface reconstructions for modifying properties of single crystal silicon substrates with a view to the creation of new nanostructures is a promising direction in the development of nanotechnologies. Systems Si(100)–$c$(4 $\times$ 12)–Al and Si(111)–5.55 $\times$ 5.55–Cu occupy special positions among stable reconstructions of the silicon surface, which have been recently demonstrated to be promising templates. The adsorption of cobalt on these surfaces at various temperatures has been studied using scanning tunneling microscopy. The room-temperature deposition leads to the formation of a weakly ordered layer of metallic Co with retained initial reconstructions at the Co/Si interface. An increase in the temperature leads to the formation of faceted cobalt silicide islands on both reconstructed surfaces.

Received: 22.09.2009