This article is cited in 7 papers

LEDs based on InAs/InAsSb heterostructures for CO$_2$ spectroscopy ($\lambda$ = 4.3 $\mu$m)

A. S. Golovin, A. P. Astakhova, S. S. Kizhaev, N. D. Il'inskaya, O. Yu. Serebrennikova, Yu. P. Yakovlev

Ioffe Institute, St. Petersburg

Abstract: Light-emitting diodes (LEDs) operating in a 4.1–4.3 $\mu$m wavelength range have been created on the basis of InAs/InAsSb heterostructures grown by metalorganic vapor-phase epitaxy. The output radiation power of LEDs is increased using flip-chip design. Investigation of the electrolumuinescent properties of LEDs with smooth and profiled output edge surface showed that the latter LEDs possess a greater efficiency, which is related to an increase in the radiation yield due to multiply repeated reflection from the curved surface. The output power of LED operating in a quasi-continuous wave mode was 30 $\mu$W at a current of 200 mA and that in a pulse mode was 0.6 mW at a current pulse amplitude of 2 A.

Received: 23.07.2009

 English version: Technical Physics Letters, 2010, 36:1, 47–49

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