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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011 Volume 37, Issue 24, Pages 88–94 (Mi pjtf9377)

This article is cited in 3 papers

Formation of surface structures on single-crystalline silicon under the action of nanosecond high-power ion beam pulses

V. S. Kovivchakab, T. V. Panovaab, O. V. Krivozubovab, N. A. Davletkildeevab

a Omsk Branch, Institute for Semiconductor Physics, Siberian Branch, RAS
b Omsk State University

Abstract: We have studied the formation of surface structures on single-crystalline silicon surface under the action of a nanosecond pulsed high-power proton-carbon ion beam. Morphological features of the structures that appear as a result of this processing are described and possible mechanisms of their formation are considered.

Received: 19.07.2011


 English version:
Technical Physics Letters, 2011, 37:12, 1183–1185

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© Steklov Math. Inst. of RAS, 2026